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Alfio Zanchi

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Probe Detectors for Mapping Manufacturing Defects

Zanchi, A.*; Zappa, F.*; Ghioni, M.*; Giudice, A.*; Morrison, A.P.°; Sinnis, V.S.#

* Dipartimento di Elettronica ed Informazione - Politecnico di Milano, Italy

° Dept. Electrical Engineering and Microelectronics, UCC, Cork (Ireland)

# NMRC, Lee Maltings, Prospect Row, Cork (Ireland)

Published in :

Proceedings of the
IEEE International Caracas Conference on
Devices, Circuits and Systems
(2000-ICCDCS)

Location Cancùn (Mexico) Date March 15-17, 2000 on Pages: CD-Paper No. #I-14

Abstract :

                The process-dependent defectivity of p-n junctions was investigated through
                the measurement of the avalanche triggering rate of single-photon avalanche diodes
                used as process probes. A non-linear dependence of the ignition rate with the area
                of circular junctions is reported, which can be ascribed to a non-uniform density of the
                thermal generation centers, due to gettering. This has been verified by means
                of microscopic inspection and comparison with other available data.
                Technological hints are finally derived to counteract this non-uniformity.

Subject Terms :

                Semiconductor manufacturing quality ranking; p-n junctions; process probes;
                avalanche ignition rate; figures of merit for silicon planar processing;
                SPAD (Single Photon Avalanche Diode); defect-induced carrier generation;
                circular diodes; trench isolation; IEM defectivity inspection (Infrared Emission
                Microscopy); integrated circuits devices.

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