In this paper, we present a process probe capable of measuring the avalanche
                 ignition rate of the generation centers, in order to investigate some
                 process-dependent morphological properties of p-n junctions. In particular,
                 we report a nonlinear dependence of the defectivity with the area of circular
                 junctions, which can be ascribed to a radially growing density of generation
                 centers, like dopant clusters. This hypothesis has been verified by means of
                 both microscopic inspection of the probes and comparison with alternative
                 probe geometries. Technological hints are finally provided to counteract the
                 defectivity, thus leading to potential improvements in the fabrication of
                 microelectronic devices.

                p-n junctions; defectivity assessment; avalanche ignition rate; generation centers;
                process-dependent morphological properties; nonlinear dependence; 
                circular junctions; dopant clusters; microscopic inspection; alternative probe 
                geometries; microelectronic devices; probe detector.